以碳纳米管为模板合成氮化硅纳米丝

Synthesizing Si_3N_4 Nanowires Using Carbon Nanotube as Stencil-Plate

用微米级SiO2、Si和混合粉末为原料,用碳纳米管覆盖其上作为模板,以氮气为反应气合成了一维氮化硅纳米线体。测量了不同温度下合成纳米氮化硅的型貌和结构,研究表明温度对纳米丝的直径有相当的影响并对其机理进行了初步探讨,通过X射线衍射分析可知一维纳米氮化硅有一定的晶体性质,对纳米氮化硅进行红外测量,说明了样品结构红外吸收谱具有蓝移和宽化现象。

Si3N4 nanowires are synthesized by chemical vapor deposition（CVD） using Si, SiO2 micro-particles as raw material and covered by carbon nanotube. The mixture react at nitrogen atmosphere, then Si3N4 nanowires are prepared under 1500℃, 1550℃, 1600℃ respectively. Samples are measured by SEM, XRD and IAS. The result shows that temperature has remarkable effect on the diameter of nanowires.