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纳米材料在光电探测器中的应用 被引量:1

Applications of Nanocrystal in Photodetectors
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摘要 以纳米颗粒、纳米管、纳米线材料制作的紫外探测器、红外探测器为例,综述了当前纳米光电探测器的开发现状和发展趋势。 The research and development of nano-technologies promote the extensive applications of the nanocrystal devices. The nanocrystal photodetectors are recognized as one important part. For examples of UV or IR photodetectors based on nanoparticles, nanotubes and nanowires,the development trends of nanocrystal photodetectors are explained.
出处 《半导体光电》 EI CAS CSCD 北大核心 2006年第3期225-230,共6页 Semiconductor Optoelectronics
关键词 纳米材料 光电探测器 应用 nanocrystal photodetector application
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参考文献33

  • 1程开富.纳米光电子器件初露端倪[J].世界产品与技术,2003(6):29-32. 被引量:4
  • 2Huang M,Mao S,Henning F,et al.Room temperature ultraviolet nanowire nanolasers[J].Science,2001,292:1 897-1 899.
  • 3Terrones M.Science and technology of the twenty-first century:Synthesis,properties,and applications of carbon nanotubes[J].Annu.Rev.Mater.Res.,2003,33:419-501.
  • 4Vaseashta A,Irudayaraj J.Nanostructured and nanoscale devices and sensor[J].J.Opto.and Advanced Materials,2005,7(1):35-42.
  • 5Moore D F,Milne W I,Oda S.Nanostructured materials and devices for sensor and electronic applications[J].Power Engineering Journal,1999:89-93.
  • 6Reisner D E,Xiao T D,Strutt P R.Nanostructured materials for energy storage and energy conversion devices[A].Energy Conversion Engineering Conference,1997,IECEC-97[C].1997,2:1 311-1 316.
  • 7Allan G,Delerue C,Lannoo M.Nature of luminescent surface states of semiconductor nanocrystallites[J].Phys.Rev.Lett.,1996,76:2 961-2 964.
  • 8Nayfeh O M,Rao S,Smith A,et al.Thin film silicon nanoparticle UV photodetector[J].Photon.Technol.Lett.,2004,16(8):1 927-1 929.
  • 9Nayfeh M H,Rao S,Nayfeh O M A,et al.UV photodetectors with thin-film Si nanoparticle active medium[J].IEEE Trans.Nanotechnology,2005,4(6):660-667.
  • 10Burr T A,Seraphin A A,Werwa E,et al.Carrier transport in thin films of silicon nanoparticles[J].Phys.Rev.B,1997,56:4 818-4 824.

二级参考文献41

  • 1张立德.-[J].稀有金属材料与工程,2001,30:695-695.
  • 2张亚非 郭银忠 徐东.操纵碳纳米管选择性取向排布于基底表面的方法[P].中国, 02111337.8.2002年4月.
  • 3R.D.小哈得逊著.红外系统原理翻译组译.红外系统原理[J].北京: 国防工业出版社,1975.170.
  • 4[4]Duan X ,Hu X,Lieber C M. General synthesis of compound semiconductor nanowires. Adv Mater, 2000,12: 298
  • 5[5]Pan Zhengwei, Lar HauLing, Frederick C K Au ,et al. Oriented silicon carbide nanowires :Synthesis and field emission properties. Adv Mater, 2000,12: 1186
  • 6[6]Duan X,Lieber C M. Laser-assisted catalytic growth single crystal GaN nanowires. J Amer Chem Soc, 2000,122:188
  • 7[7]Duan X,Wang J,Lieber C M. Synthesis and optical properties of gallium arsenide nanowires. Appl Phys Lett, 2000,76:1116
  • 8[8]Smith P A. Electric-field assisted assembly and alignment of metallic nanowires. Appl Phys Lett, 2000,77:1399
  • 9[9]Abhishek Kumar Singh,Tina M Briere,Vijay Kumar,et al.Magnetism in transition-metal-doped silicon nanotubes.Phys Rev Lett, 2003,91: 146802
  • 10[10]Yasuo Wada, Tokuo Kure, Toshiyuki Yoshimura, et al.Polycrystalline silicon"slitnanowire" for possible quantum devices. J Vacuum Sci & Techn B,1994,12:48

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