GaN基功率型LED芯片散热性能测试与分析

Thermal Dispersion of GaN-based Power LEDs

与正装LED相比,倒装焊芯片技术在功率型LED的散热方面具有潜在的优势。对各种正装和倒装焊功率型LED芯片的表面温度分布进行了直接测试,对其散热性能进行了分析。研究表明,焊接层的材料、焊接接触面的面积和焊接层的质量是制约倒装焊LED芯片散热能力的主要因素;而对于正装LED芯片,由于工艺简单,减少了中间热沉,通过结构的优化,工艺的改进,完全可以达到与倒装焊LED芯片相同的散热能力。

In the aspect of thermal dispersion for power LEDs, flip-chip configuration has potential predominance. The temperature distribution of power LEDs is measured, and the performance of thermal dispersion is discussed. The analytical results show that the solder material,contact area and processing quality of solder layer will be main factors restricting the ability of thermal dispersion for flip-chip configuration LEDs. Meanwhile, the normal LED chips emitting light from p-side are possible to reach the same thermal dispersion performance as the flip-chip bonded LEDs through adopting appropriate bonding technique and optimizing chip structure.