摘要
采用InGaAs/InGaAsP应变量子阱折射率分别限制(SCH)宽波导结构结合优化欧姆接触减小串联电阻的方法,制作出高效率大功率1.06μm波段半导体激光列阵模块。激光芯片宽1 cm,腔长1 200μm,条宽200μm,填充密度为50%;室温连续输出功率为50.2 W时光电转换效率达到56.9%。
1.06 μm emitting broad-waveguide-type InGaAs/InGaAsP strained-compensated single-quantum well laser arrays is fabricated. Ohmic-contact technology is optimized for wall- plug efficiency. The module＇s wall-plug efficiency can reach to 56.9% at a CW output power of 50.2 W. The threshold current is less than 10 A and the central wavelength is 1 054. 5 nm at 50 A.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2006年第3期260-262,共3页
Semiconductor Optoelectronics
