Development of Si_3N_4/Al composite by pressureless melt infiltration

Pressureless infiltration process to synthesize Si3N4/Al composite was investigated. Al-2%Mg alloy was infiltrated into Si3N4 and Si3N4 containing 10% Al2O3 preforms in the atmosphere of nitrogen. It is possible to infiltrate Al-2%Mg alloy in Si3N4 and Si3N4 containing 10% Al2O3 preforms. The growth of the dense composite of useful thickness was facilitated by the presence of magnesium powder at the interface and by flowing nitrogen. During infiltration Si3N4 reacted with aluminium to form Si and AlN, the growth of composite was found to proceed in two ways, depending on the Al2O3 content in the initial preform. Firstly, preform without Al2O3 content gives rise to AlN, Al3.27Si0.47 and Al type phases after infiltration. Secondly, perform with 10% Al2O3 content gives rise to AlN-Al2O3 solid solution phase (AlON), MgAl2O4, Al and Si type phases. AlON phase was only present in composite, containing 10% Al2O3 in the Si3N4 preforms before infiltration.

Pressureless infiltration process to synthesize Si3N4/Al composite was investigated. Al-2%Mg alloy was infiltrated into Si3N4 and Si3N4 containing 10% Al2O3 preforms in the atmosphere of nitrogen. It is possible to infiltrate Al-2%Mg alloy in Si3N4 and Si3N4 containing 10% Al2O3 preforms. The growth of the dense composite of useful thickness was facilitated by the presence of magnesium powder at the interface and by flowing nitrogen. During infiltration Si3N4 reacted with aluminium to form Si and AIN, the growth of composite was found to proceed in two ways, depending on the Al2O3 content in the initial preform. Firstly, preform without Al2O3 content gives rise to AIN, Al3.27Si0.47 and Al type phases after infiltration. Secondly, perform with 10% Al2O3 content gives rise to AIN-Al2O3 solid solution phase （AION）, MgAl2O4, Al and Si type phases. AlON phase was only present in composite, containing 10% Al2O3 in the Si3N4 preforms before infiltration.