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In-situ observation on domain switching of PLZT via Raman spectroscopy 被引量:3

In-situ observation on domain switching of PLZT via Raman spectroscopy
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摘要 An in-situ and nondestructive technique was proposed and established for the study of domain switching in PLZT ceramics via observation of Raman spectrum changes based on the Raman light scattering principle and the soft mode theory. A Vickers indent was introduced into the polarized PLZT specimen so that the Raman spectrum change associated with the domain switching as induced either by an applied electric field or by a stress field surrounding the tip of the Vickers indent crack was in-situ measured and studied using this established technique. The relation between the domain switching and the measured Raman spectrum was discussed. It is well demonstrated that this technique can sensitively detect and measure the domain switching via the observation of Raman spectrum changes. The results confirm that Raman spectrum intensity is directly attributed to the change of the polarization direction of the incidence and scattered lights with respect to the direction of the average polarization direction of the domain in the polarized specimen. When the two directions are parallel, the induced polarizability tensor of the specimen would be enhanced and give rise to a higher intensity for Raman scattering light. An in-situ and nondestructive technique was proposed and established for the study of domain switching in PLZT ceramics via observation of Raman spectrum changes based on the Raman light scattering principle and the soft mode theory. A Vickers indent was introduced into the polarized PLZT specimen so that the Raman spectrum change associated with the domain switching as induced either by an applied electric field or by a stress field surrounding the tip of the Vickers indent crack was in-situ measured and studied using this established technique. The relation between the domain switching and the measured Raman spectrum was discussed. It is well demonstrated that this technique can sensitively detect and measure the domain switching via the observation of Raman spectrum changes. The results confirm that Raman spectrum intensity is directly attributed to the change of the polarization direction of the incidence and scattered lights with respect to the direction of the average polarization direction of the domain in the polarized specimen. When the two directions are parallel, the induced polarizability tensor of the specimen would be enhanced and give rise to a higher intensity for Raman scattering light.
出处 《中国有色金属学会会刊:英文版》 EI CSCD 2006年第3期638-642,共5页 Transactions of Nonferrous Metals Society of China
基金 Project(10472098) supported by the National Natural Science Foundation of China
关键词 铁电陶瓷 维氏硬度计 域转换 拉曼光谱 PLZT ferroelectric ceramics Vickers indent domain switching Raman observation
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参考文献13

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