基于Matlab的APD器件模拟

Simulation of APD Based on Matlab

为了迅速了解雪崩光电二极管(APD)的特性以确保量子保密通信系统的质量,在适当的假设前提下,依据经验公式并借助于Matlab的矩阵运算功能计算吸收渐变电荷倍增分离型雪崩光电二极管(SAGCM APD)的电场分布,然后以此得出电子、空穴倍增系数,最后再利用这些系数及传递函数计算出SAGCM APD的增益-电压特性及频率响应特性,模拟的结果较好地与实验结果一致。

Understanding the characteristic of Avalanche Photodiode（APD） quikly to make sure the effective of quantum key distribution. Under the suitable supposition premise and on the basis of the empirical formula, the field profile of Separate Absorption Grading Charge and Multiplication Avalanche Photodiode （SAGCM- APD） is calculated by means of the Matlab matrix operation function. The electrons and holes multiplication coefficients are in turn computed. By using above coefficients and the transfer functions, the gain - voltage and the frequency - response characteristics for SAGCM - APD are figured out. There is a good correspondence between the simulation with experimental results.