摘要
采用表面改性法制备了负载型复合半导体N iO-MoO3/S iO2,用程序升温还原、X射线衍射、拉曼光谱、透射电镜、比表面积测定和紫外-可见光漫反射光谱技术对固体材料的组成结构和光吸收性能进行了表征.结果表明,N iO-MoO3/S iO2的平均粒径约为10 nm,在载体表面存在xN iO.MoO3复合氧化物的微晶,N iO和MoO3在固体材料表面产生相互修饰作用.N iO的加入有助于提高MoO3在载体S iO2表面的分散程度,抑制MoOx的聚合,减小微晶尺寸,而且可以增强固体材料的光吸收性能,提高复合半导体对光能的利用率.
The supported coupled-semiconductor of NiO-MoO3/SiO2 was prepared by surface modification method. TPR, XRD, Raman, TEM, BET and UV-Vis DRS techniques were used to characterize the structure and light adsorption ability of NiO-MoO3/SiO2. The results show that, the particle size of NiO-MoO3/SiO2 is about 10 nm, xNiO·MoO3 coupled oxide exist on the silica surface as crystallite, and NiO and MoO3 on the support surface can act on each other. On the one hand, NiO can promote the dispersion of MoO3 on the silica surface, which effectively prevents MoO, from aggregation and diminishes the size of crystallite, on the other hand, NiO can expand the light absorption ability of the solid material, raise its utilization to the light energy.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第7期1336-1339,共4页
Chemical Journal of Chinese Universities
基金
国家重大基础研究前期研究专项基金(批准号:2001CCA03600)资助
关键词
表面改性法
复合半导体
三氧化钼
氧化镍
光吸收性能
Surface modification method
Coupled semiconductor
Molybdenum trioxide
Nickel oxide
Light adsorption ability