抑制侧壁注入式磁敏晶体管结构的研究

Research on Suppressed Sidewall Injection Megnetotransistor Structure

介绍了一种新型的用ＣＭＯＳ标准工艺制作的具有抑制侧壁注入效应的横向磁敏晶体管．理论分析及实验测量结果表明。

In this paper we present an over magnetotransistor made with standard CMOS technology.The device is a dual-collector lateral magnetotransistor with suppressed injection of the emitter sidewalls.A wide linear response to the magnetic field and very high sensitivi-ties are experimentally and theoretically demonstrated.