退火温度与ZAO透明导电薄膜晶体结构及特性关系的研究

Influence of Annealing Temperature on Microstructures and Properties of Transparent Conductive ZAO Films

用射频磁控溅射ZAO陶瓷靶的方法在石英衬底上成功制备了ZAO透明导电薄膜。用X射线衍射仪(XRD)、紫外可见(UV-Vis)分光光度计、扫描电子显微镜(SEM)、原子力显微镜(AFM)等手段,研究了薄膜的晶体结构、光学禁带宽度、表面和断面形貌与退火温度的变化关系。结果表明,低温段300℃以下退火的薄膜c轴较ZnO体材料有拉长现象;高温度段500℃到600℃退火的薄膜的晶粒直径变化平稳,其中500℃退火时,c轴也有拉长的效应,且形成良好的c轴趋向柱状晶薄膜;250℃退火时薄膜的光学禁带宽度最大,薄膜表面均匀致密,晶粒充分团聚结晶。

Al doped ZnO （ZAO） films were grown on quartz substrates by RF magnetron sputtering of ZnO and Al2O3 ceramics.The film were characterized with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force microscopy （AFM） and ultraviolet visible transmittance spectroscopy （UV-Vis）.The results show that the post deposition annealing temperature significantly affects the mierostructures, morphologies and band-gap width of the films. For instance, at an annealing temperature of 250 ℃, the film is fairly uniform, compact with the laxgest band-gap width. When annealed at a temperature below 300 ℃ or at about 500 ℃ in high temperature （500 ℃ - 600 ℃ ） annealing, e-axis of the film is found to be a little longer than that of ZnO bulk; whereas high temperature annealing,say 500 ℃ - 600 ℃ ,little affects the variations in grain size.