摘要
GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition （MOCVD） are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off （LLO） technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm^2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy （SEM） combined with energy dispersive X-ray spectrometer （EDS） measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy （AFM） and photoluminescence （PL） measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.
GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition （MOCVD） are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off （LLO） technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm^2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy （SEM） combined with energy dispersive X-ray spectrometer （EDS） measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy （AFM） and photoluminescence （PL） measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.
基金
This work was partly supported by the National High Technology Research and Development Program of China (No. 2004AA311030) the State Key Program of Basic Research of China (No. 20000683-02) the Beijing Municipal Education Commission (No. 2002kj018, and kz200510005003)and the Beijing Municipal Science and Technology commission (No. D0404003040221).
