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氧吸附金刚石(100)表面的电子结构 被引量:1

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摘要 利用基于密度泛函理论的第一原理方法,计算了桥接型和顶接型氧吸附金刚石(100)表面的平衡态几何结构和电子结构.结果表明,桥接型氧吸附金刚石(100)表面带隙中不存在表面态,价带中的占据态主要由O 2p未成键轨道和C-O轨道、C-H轨道作用诱发,而顶接型氧吸附金刚石(100)表面带隙中存在未占据态,来源于C 2p和O 2p的未成键轨道,价带中占据态则由O 2p未成键轨道和C=Oπ键诱发.
出处 《科学通报》 EI CAS CSCD 北大核心 2006年第12期1377-1382,共6页 Chinese Science Bulletin
基金 国家自然科学基金(批准号:50475018,50505020) 北京市科技计划资助项目.
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  • 1Kalish R, Reznik A, Uzan-Saguy C, et al. Is sulfer a donor in diamond? Appl Phys Lett, 2000, 76(6): 757-759
  • 2Rezek B, Nebel C E. Kelvin force microscopy on diamond surfaces and devices. Diamond Rel Mater, 2005, 14(3-7): 466-469
  • 3Saito T, Park K,Hirama K, et al. Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface. Diamond Rel Mater, 2005, 14(11-12): 2043-2046
  • 4Wolter S D, Stoner B R, Glass J T, et al. Textured growth of diamond on silicon via in situ carburization and bias-enhanced nuocleation. Appl Phys Lett, 1993, 62(11): 1215-1217
  • 5Chu C J, D'Evelyn M P, Hauge R H, et al. Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and(110) surfaces: Carbon-13 studies. J Appl Phys, 1991, 70(3):1695- 1705
  • 6Hamza A V, Kubiak G D, Stulen R H. Hydrogen chemisorption and the structure of the diamond C(100)-2 × 1 surface. Surf Sci,1990, 237(1-3): 35-52
  • 7Phersson P E, Mercer T W. Oxidation of the hydrogenated diamond (100) surface. Surf Sci, 2000, 460(1-3): 49-66
  • 8Hayashi K, Yamanaka S, Watanabe H, et al. Investigation of the effect of hydrogen on electronical and optical properties in chemical vapor deposited on homoepitaxial diamond films. J Appl Phys, 1997, 81(2): 744-753
  • 9Yagi L, Notsu H, Kondo T, et al. Electrochemical selectivity for redox systems at oxygen-terminated diamond electrodes. J Electroanal Chem, 1999, 473(1-2): 173-178
  • 10Rutter M ,I, Robertson ,I. Ab initio calculation of electron affinities of diamond surfaces. Phys Rev B, 1998, 57(15): 9241-9245

同被引文献39

  • 1张芳英,朱圣龙,滕英元.氧气在Al(001)面吸附的第一原理研究[J].科学通报,2004,49(16):1687-1690. 被引量:11
  • 2Kokh D B, Buenker R J, Whitten J L. Trends in adsorption of open-shell atoms and small molecular fragments on the Ag (111) sur- face. Surf Sci, 2006, 600(23): 5104- 5113.
  • 3Kramar T, Vogtenhuber D, Podloucky R, et al. Electronic structure calculations for ac (2 ~ 2)-C1 overlayer on a Ag (001) surface. Electrochim Acta, 1995, 40(1): 43--51.
  • 4Menetrey M, Markovits A, Minot C. Adsorption of chlorine and oxygen atoms on clean and defective rutile-TiO2 (110) and MgO (100) surfaces. J Mol Struct: Theochem, 2007, 808(1-3): 71 79.
  • 5Staicu-Casagrande E M, Lacombe S, Guillemot L, et al. Interaction of hydrogen and oxygen with a chlorine covered Ag (111) surface. Surf Sci, 2001, 480(1-2): L411- L419.
  • 6Andryushechkin B V, Eltsov K N, Shevlyuga V M, et al. Atomic structure of saturated chlorine monolayer on Ag (111) surface. Surf Sci, 1998, 407(1-3): L633--L639.
  • 7Guo Q, Sterratt D, Williams E M. Chemical selectivity with ESD of chlorinated silicon species. Surf Sci, 1996, 356(1-3): 75--91.
  • 8Alatalo M, Jaatinen S, Salo P, et al. Oxygen adsorption on Cu (100): First-principles pseudopotential calculations. Phys Rev B, 2004, 70:245417.
  • 9Hellman A, Razaznejad B, Yourdshahyan Y, et al. Initial sticking of O2 modeled by nonadiabatic charge transfer. Surf Sci, 2003, 126: 532--535.
  • 10Menzel D. Water on a metal surface. Science, 2002, 295:58 -59.

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