脉冲激光沉积技术制备IrO_2薄膜的研究

Preparation of IrO_2 Thin Films by Pulsed Laser Deposition

利用脉冲激光沉积（PLD）技术，在Si（100）衬底上制得了导电氧化铱（IrO2）薄膜。讨论了沉积参数（O2分压、衬底温度）对IrO2薄膜的结构、表面形貌和导电性的影响。结果表明：20Pa为最佳O2分压、400℃～500℃为适宜的沉积温度，此条件下制得的IrO2薄膜结晶完整，组织均匀、形状一致，排列致密，其最低电阻率约为42μΩ·cm。

Highly conductive iridium oxide （IrO2） thin films was successfully deposited on the Si（100） substrate by pulsed laser deposition method. The effects of deposition parameters, such as oxygen ambient pressure and substrate temperature, on the structure and morphology and resistivity of deposited IrO2 thin film were discussed. The optimum parameters were identified to be the oxygen ambient pressure of 20 Pa and the substrate temperatures of 400℃～500℃. With the increase of substrate temperature, the IrO2 thin films display a uniform and densely packed granular morphology, as a result, the resistivity decreases, reaching a lowest value of 42μΩ·cm at 500℃.