退火对CoSb_3块体热电性能的影响

Effect of Annealing on Thermoelectric Properties of Bulk CoSb_3

采用烧结和退火工艺制备了CoSb3块体热电材料,并探讨了退火对热电性能的影响。用X射线衍射分析了样品的相组成,用电常数测试仪和激光热导仪测试了样品的热电性能。结果表明,退火前后样品具有相同的相组成,其电阻率随着温度的升高而降低,具有典型的半导体电学特征;在相同温度下退火样品的ZT值低于或近似于未退火的样品,因此退火对于提高和改善CoSb3块体材料的热电性能没有明显作用。

For investigating the effect of annealing on thermoelectric properties, bulk CoSb3 was prepared via sintering-annealing. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal conductance instrument. Experimental results show that the annealed and unannealed samples have thesame phases, their electric resistivities increase with rising temperature and have the characteristics of typical semiconductor electricity, and at the stone temperature ZT values of annealed samples are lower than or near to that of the unannealed one. Therefore, there is no obvious effect of annealing on improving the thermoelectric properties of bulk CoSb3 materials.