摘要
过渡金属硅化物β-FeSi2是具有直接带隙特性的半导体材料，禁带宽度约0．8eV，是制作硅基光电子光源及探测器件以及太阳能电池，热电器件等最有发展前景的硅基材料之一。目前，已经用多种方法在硅衬底上进行了薄膜外延生长及器件制作的尝试，取得了一定的成功。文中就近年来β-FeSi2薄膜材料的生长，性质以及在光电子器件中的应用进行了评述。
Iron disilicide （ β- FeSi2 ） is one of the promising semiconductor materials for Si - based emitters, photodetectors, solar cells and thermoelectric devices with its direct band gap of 0. 8eV. So far, various ways were attempted to deposit thin films epitaxially on Si substrates to fabricate optoelectronic devices. In this paper, we review the growth and properties of β-FeSi2 thin films and particles on Si substrate, as well as its potential application in the optoelectronic devices.
出处
《中国材料科技与设备》
2006年第4期16-19,共4页
Chinese Materials Science Technology & Equipment
基金
福建省青年科学技术人才创新项目（2004J021）
