大功率LD封装技术的研究

New Encapsulation Technique of High Power Semiconductor Lasers

提出一种新的LD列阵封装方法。把热沉形状改为台阶式,使稳态工作条件下的芯片前腔面散热速度提高,前后腔面温差大幅度降低,因此可以提高COD阈值,降低腔面退化率,且更方便于光纤耦合封装。利用Ansys软件对大功率LD稳态工作的温度分布进行模拟。结果发现:改进前的芯片前、后腔面温差为9.0 K,改进后温差降为3.5 K,降低了60%;热沉前、后端面的温差由原来的18.2 K降为8.0K,降低了56%。

The paper has brought forward a new encapsulation technique of semiconductor laser arrays. By turning the heat sink shape into a step model,the chip front cavity surface heat will be rapidly spilled out under laser static working condition and it will reduce the temperature difference of laser chip front and back cavity surface. So COD threshold value is increased and the cavity surface degenerate rate is depressed. And these will be propitious to fiber coupling encapsulation. Ansys software simulates the temperature distribution of high power laser arrays in static working condition. The result is that the temperature difference of the chip front and back cavity surface,which uses general heat sink encapsulation technique,is 9.0 K,and the other difference in temperature is 3.5 K which uses the new step model heat sink encapsulation,and it reduces 60%. The difference in temperature of the heat sink front and back surface is also reduced from 18.2 K to 8.0 K. Experimental results match the theoretical analysis well.