摘要
Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. Compared with bulk SiGe HBT, the results show that the buried oxide layer(BOX) can reduce collector-base capacitance C_ CB with the maximum value 89.3%, substrate-base capacitance C_ SB with 94.6%, and the maximum oscillation frequency is improved by 2.7. The SOI structure improves the frequency performance of SiGe HBT, which is adaptable to high-speed and high power applications.
Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. Compared with bulk SiGe HBT, the results show that the buried oxide layer （BOX） can reduce collector-base capacitance CCB with the maximum value 89.3%, substrate-base capacitance CSB with 94. 6%, and the maximum oscillation frequency is improved by 2.7. The SOl structure improves the frequency performance of SiGe HBT, which is adaptable to high-speed and high power applications.
关键词
晶体管
频率特性
氧化层
振荡频率
SOI
SiGe HBT
Frequency performance
Maximum oscillation frequency
