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掺杂浓度对多晶硅电阻温度系数的影响 被引量:2

Influence of Doping Concentration on Temperature Coefficent of Polysilicon Resistance
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摘要 本文对多晶硅电阻的温度系数进行了研究,随着掺杂浓度的增大,多晶硅电阻的温室系数从负值变到正值。实验结果可用Seto模型进行解释。 Temperature coefficient of poly-silicon resistance is studied. With doping concentration increasing, The coefficient varies from negative to positive. The experimental results can be illustrated by seto model.
作者 石争 毛赣如
机构地区 天津大学
出处 《传感器技术》 CSCD 1990年第6期10-12,共3页 Journal of Transducer Technology
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