摘要
本文对多晶硅电阻的温度系数进行了研究,随着掺杂浓度的增大,多晶硅电阻的温室系数从负值变到正值。实验结果可用Seto模型进行解释。
Temperature coefficient of poly-silicon resistance is studied. With doping concentration increasing, The coefficient varies from negative to positive. The experimental results can be illustrated by seto model.
出处
《传感器技术》
CSCD
1990年第6期10-12,共3页
Journal of Transducer Technology