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一种高性能低压电荷泵电路 被引量:3

Circuit design of low voltage charge pump with high performance
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摘要 提出了一种高性能低压电荷泵电路.该电路基于Dickson电荷泵,用二极管连接的npn三极管(bc结连接)替代NMOS管.三极管be结的结电压稳定,且漏电流(Ise)小,故电荷泵电荷转移效率高.在3.3V的工作电压下,实现了11.5V的高输出电压,而且时钟频率低(1MHz).通过分析和仿真,采用二极管连接的三极管电荷泵性能优秀,具有很强的实用性. A circuit for low voltage charge pump with high performance was designed which consisted of Dickson charge pump and diode-connected npn (as a pumping stage) mainly. Because of the stabili- ty of voltage and the lower Isc on be junction, the efficiency of charge transferring was improved largely. Under operation voltage of 3.3 V, output driver voltage of 11.5 V was supplied by the charge pump and the clock frequency was lower (1 MHz). The simulation results show that the proposed charge pump circuit works excellently.
出处 《华中科技大学学报(自然科学版)》 EI CAS CSCD 北大核心 2006年第7期88-89,107,共3页 Journal of Huazhong University of Science and Technology(Natural Science Edition)
基金 湖北省信息产业专项基金资助项目(05060).
关键词 电荷泵电路 Dickson电荷泵 低压 高性能 charge pump circuit Dickson charge pump low-voltage high performance
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参考文献4

  • 1徐志伟,肖斌,闵昊,郑增钰.适合低功耗工作的MOS电荷泵[J].微电子学,2000,30(2):136-140. 被引量:5
  • 2Kawahara T, Kobayashi Y, Jyouno S. Bitline clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories [J].IEEE J Solid-Static Circ, 1996, 31:1 590-1 600.
  • 3Dickson J F. On-chip High-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique[J]. IEEE J Solid-State Circuits,1976, 11(3):374-378.
  • 4Wu Jieh-Tsorng, Chang Kuen-Long. MOS charge pumps for low-voltage operation [J]. IEEE J Solid-State Circuits, 1998, 33(4): 592-597.

二级参考文献1

  • 1Wu J T,IEEEJ Sol Sta Circ,1998年,33卷,592页

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  • 1刘楷,潘立阳,朱钧.一个精确时钟驱动的Dickson倍压电荷泵电路[J].微电子学,2002,32(4):302-304. 被引量:7
  • 2Wu J T, Chang Y H, Chang K L. 1. 2 V CMOS switched capacitor circuits [C] ff International Solid- State Circuits Conference. Dallas.- IEEE, 1996: 388- 389.
  • 3Pierre R S. Low-power BiCMOS op-amp with inte- grated current-mode charge pump[J]. IEEE Journal of Solid-State Circuits, 2000, 35(7): 1046-1050.
  • 4Choi K H, Park J M, Kim J K, et al. Floating-well charge pump circuits for sub-2.0 V single power sup- ply flash memories[R]. Symposium on VLSI Circuits Digest of Technical Papers. Kyoto: IEEE, 1997: 61- 62.
  • 5Shin J, Chung I Y, Park Y J, et al. A hew charge pump without degradation in threshold voltage due to body effect[J]. IEEE Journal of Solid-State Circuits, 2000, 35(8): 1227-1230.
  • 6Sawada K, Sugawara Y, Masui S. An on-chip volt- age generator circuit for EEPROM's with a power-supply voltage below 2 V[R]. Symposium on VLSI Circuits Digest of Technical Papers. Kyoto: IEEE, 1995: 75-76.
  • 7Wu J T, Chang K L. MOS charge pump for low- voltage operation [J]. IEEE Journal of Solid-State Circuits, 1998, 33(4): 592-597.
  • 8Ker M D, Chen S L, Tsai C S. Design of charge pump circuit with consideration of gate-oxide reliabil-ity in low-vol-tage CMOS processes[J]. IEEE Jour- nal of Solid-State Circuits, 2006, 41(5) : 1100-1107.
  • 9Jiang Bowei, Wang Xiao, Min Hao. A novel all- pMOS AC to DC charge pump with high efficiency [J]. Chinese Journal of Semiconductors, 2008, 29 (4) : 660-662.
  • 10梁星,梁超,付永朝,高旭东,黎美.一种驱动能力稳定的电荷泵系统的设计和应用[J].中国集成电路,2017,26(5):34-38. 被引量:2

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