CMOS器件^(60)Coγ射线、电子和质子电离辐射损伤比较

A comparison of ionizing radiation damage in CMOS devices from ^(60)Co Gamma rays,electrons and protons

利用TRIM95蒙特卡罗软件计算了质子在二氧化硅中的质量阻止本领和能量沉积,比较了质子在二氧化硅中的电离阻止本领与核阻止本领,分析了质子在材料的表面吸收剂量与灵敏区实际吸收剂量的关系.利用60Coγ射线、1MeV电子和2—9MeV质子对CC4007RH和CC4011器件进行辐照实验,比较60Coγ射线和带电粒子的电离辐射损伤情况.实验结果表明,60Coγ射线、1MeV电子和2—7MeV质子辐照损伤效应中,在0V栅压下可以相互等效;在5V栅压下,以60Coγ射线损伤最为严重,1MeV电子的辐射损伤与60Coγ射线差别不大,9MeV以下质子辐射损伤总是小于60Coγ射线,能量越低,损伤越小.

The stopping power and accumulation energy for protons in SiO2 are calculated by using Monte Carlo software TRIM95. As a result, the ionizing stopping power and the nucleus stopping power are compared for protons in SiO2 , and the relation between absorption dose of material surface and factual absorption dose of sensitive area is discussed. CCA007RH and CC4011 devices were irradiated with Co-60 gamma rays, 1MeV electrons and 1-9MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. The result show that the radiation damages from Co-60 gamma rays, 1MeV electrons and 1-TMeV protons were equivalent for 0V gate bias conditions. Under 5V gate bias, the radiation damage for Co-60 gamma rays was most serious. The distinction in damage between 1MeV electrons and Co-60 gamma rays was not large. The damage from protons below 9MeV was always less than that from Co-60. The lower the proton energy, the less the damage.