S波段超宽带固态功率放大器的研制

Design of S-band UWB Solid State Power Amplifier

本文结合一款新研制的S波段超宽带固态功率放大器,介绍了超宽带固态功率放大器的设计理论和方法,根据砷化镓场效应晶体管的小信号S参数和I V曲线,用微波仿真软件对功率管的输入、输出阻抗匹配电路及其偏置电路进行优化仿真设计。通过制作并测试此放大器,验证了该设计方法的可行性。最后,给出了测试数据,它在2GHz^4GHz的频带范围内,输入功率为40mW时,输出功率大于20W,带内功率起伏小于1. 5dB。

Combined with a newly developed S-band UWB solid state power amplifier, design theories and methods of UWB solid state power amplifier are introduced. Based on small-signal S parameters and Ⅰ-Ⅴ curve of GaAs FET, the input/ output impedance matching circuits and bias circuits of GaAs FET are optimized by using microwave simulation software. The feasibility of this design is verified by making and testing the amplifier. The amplifier＇s performance test data are given. The amplifier can be operated at 2 - 4GHz frequency range. The output power is greater than 20W when the input power is 40mW, and it＇s gain flatness is less than 1.5dB.