低温条件下半导体材料禁带宽度的测量

MEASUREMENT OF THE ENERGY GAP FOR SEMICONDUCTOR MATERIALS AT LOW TEMPERATURE

介绍用硅三级管作为样品，在低温１５０Ｋ－２５０Ｋ范围内，测量其ＰＮ结正向特征，可精确求得玻耳兹曼常量及硅半导体材料禁带宽度的值．

The forward chacteristic data for the PN junction of a silicon transistor is measured atthe low temperature ranging from 150K to 250K.The accurate value of the Boltzmann constant and the energy gap of the silicon semiconductor are also obtained.