有间隙Ⅱ－Ⅵ族半导体材料散射特性的三维边缘元分析

3 D EDGE ELEMENT ANALYSIS FOR SCATTERING CHARAC TERISTICS OF Ⅱ Ⅵ SEMICONDUCTOR MATERIALS WITH GAPS

用三维边缘元方法分析了有间隙Ⅱ－Ⅵ族半导体材料的散射特性．该方法直接从泛函变分出发，避开了其它方法中求解有损超薄介质填充波导本征值和本征函数的困难，简化了求解过程．计算结果与实验值的比较证实了本方法具有有效。

The scattering characteristics of Ⅱ Ⅵ semiconductor materials filled in the waveguide with gaps were analyzed with the 3 D edge element method. Since this method starts from the variation of functional directly, it avoids the difficulties met in other methods of solving the eigenvalue and eigenfunction for very thin lossy dielectric loaded waveguide. The comparisons between the calculated results and experimental data confirm the effectiveness, reliability and accuracy of the method.