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新型的功率器件——射频LDMOS 被引量:13

A New-type Power Device——RF LDMOS FET
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摘要 射频LDMOS功率器件与普通双极型功率器件相比,结构合理、增益高、热稳定性好、性价比高,广泛应用于通信、广播、航空、军事电子等领域。文中对射频LDMOS功率器件的发展趋势、应用前景及主要性能作了较详细的分析,通过实验得出结论,LDMOS功率器件可用于固态发射机中。 Compared with common bipolar power devices, RF LDMOS power devices are of better structure, higher gain, better heat stability and low cost price. RF LDMOSFET is widely used in communication, broadcasting, aviation, military electronics and other fields. The main performances of RF LDMOSFET are analyzed in detail. A experiment with RF LDMOSFET was carried out, which showed it can be used in radar transmitter.
作者 黄江 王卫华
出处 《微波学报》 CSCD 北大核心 2006年第3期48-51,共4页 Journal of Microwaves
关键词 射频功率器件 横向扩散金属氧化物半导体 热稳定性 击穿电压 RF power devices, LDMOS, Heat stability, Breakdown voltage
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