CdS_xSe_（1－x）纳米微晶的辐射跃迁过程

RADIATIVE TRANSITION PROCESSES OF CdS_xSe_(1-x) SEMICONDUCTOR NANOCRYSTALLITES

利用变温吸收光谱和光致发光光谱研究了ＣｄＳｘＳｅ（１－ｘ）纳米微晶的辐射跃迁过程．由Ｖａｒｓｈｎｉ公式，拟合了微晶的吸收峰随温度的变化．根据变温发射光谱，研究了发光峰位置和温度的依赖关系，并分析了吸收峰和发光峰随温度变化的快慢．对发光的动力学过程．作了简单的分析．

Temperature dependence absorption and photoluminescence spectra were used to study the radiative transition processes of CdSxSe1-x nanocrystallites. The relationship between the absorption peak and temperature was fitted using Varshni equation. The results imply that the temperature dependence of absorption peak is the same as that of bulk semiconductor. From the temperature dependence photoluminescence, the relationship between photoluminescence peaks and temperature was obtained and the variationrate was analysed. The dynamics of PL process can also be elucidated simply by the temperature dependence of the process.