混晶GaAs_(1-x)P_(x)∶N中N_(x)发光的声子伴线结构

THE PHONON SIDEBAND STRUCTURE ON N_(X)LUMINESCENCE IN GaAs_(1-x)P_(x)∶N ALLOYS

本文采用荧光窄化技术，对低组分的ＧａＡｓ（１－ｘ）Ｐｘ∶Ｎ（ｘ＝０．７６，０．６５）混晶材料中Ｎｘ束缚激子的声子伴线进行了研究．在低温下，选择激发Ｎｘ带时，我们得到了与ＧａＰ∶Ｎ低温发光谱中类似的声子伴线结构．根据实验结果，给出了混晶中各种声子的能量．另外，对组分为ｘ＝０．７６的ＧａＡｓ（１－ｘ）Ｐｘ∶Ｎ混晶样品，我们还首次观察并分析了多声子重现光谱．

luorescence line narrowing technology has been used to study the phonon sidebands of Nx-bound excitons in GaAs1-xPx: N in details. Under selective excitation into inhomogenously broadened Nx band at low temperature, the sharp phonon sidebands like those in low temperature PL spectrum for GaP: N are observed. According to the experimental results, we obtained the energy values of various phonons in GaAs1-xPx: N alloys with the composition x=0. 76 and 0. 65. The photoluminescence spectrum with periodically repeated phonon sideband structure for GaAs1-xPx: N (x=0. 76) is observed and analyzed for the first time.