摘要
浸没式光刻要实现32纳米技术乃至进一步向下延伸,在高折射率液体,光学镜头以及光刻胶等关键技术领域需要不断取得突破性的进展。为了得到更高的分辨率,超高数值孔径浸没式光刻技术势在必行,由此而产生的光学偏振问题会日益突出,现在光刻领域的专家已经开始着手解决这个问题。
To get immersion lithography to the 32 nm node and beyond will require innovations in hiqh-index fluids,Ienses and resists.The hyper-NA lenses required for-increased resoIution will bring with them further poIarization issues that the lithography community is just beginning to get a handIe on.
出处
《集成电路应用》
2006年第3期16-20,21,共6页
Application of IC