摘要
硅 nanoporous 支柱数组(Si-NPA ) 被使用热水的蚀刻综合方法，和电子领域排放性质被学习。结果证明 Si-NPA 在 0.1 亩 A 和它的领域排放的排放电流有 1.48 V/mu m 的一个低刺激领域是相对稳定的。Si-NPA 的领域排放改进被相信从它的唯一的形态学和结构发源。我们发现证明 Si-NPA 是为领域排放应用的有希望的候选人材料。
The silicon nanoporous pillar array （Si-NPA） is synthesized by using hydrothermal etching method, and the electron field emission properties are studied. The results show that Si-NPA has a low turn-on field of 1.48 V/μm at the emission current of 0.1 μA and its field emission is relatively stable. The field emission enhancement of Si-NPA is believed to originate from its unique morphology and structure. Our finding demonstrates that the Si-NPA is a promising candidate material for field emission applications.
基金
Supported by the National Natural Science Foundation of China under Grant No 10574112, and the Natural Science Foundation of Henan Province under Grant No 411011800.
