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Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method 被引量:1

Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method
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摘要 A damascene structure of phase change memory (PCM) is fabricated successfully with the chemical mechanical polishing (CMP) method, and the CMP of Ge2Sb2Te5 (GST) and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy (SEM) and an energy dispersive spectrometer (EDS). The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA. A damascene structure of phase change memory (PCM) is fabricated successfully with the chemical mechanical polishing (CMP) method, and the CMP of Ge2Sb2Te5 (GST) and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy (SEM) and an energy dispersive spectrometer (EDS). The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第8期2296-2298,共3页 中国物理快报(英文版)
关键词 ION-BEAM METHOD CELL-ELEMENT ION-BEAM METHOD CELL-ELEMENT
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