CaZr_4(PO_4)_6陶瓷力学及介电性能研究

RESEARCH ON THE BENDING STRENGTH AND DIELECTRIC PROPERTIES OF CaZr_4(PO_4)_6 CERAMIC

CaZr4(PO4)6(简称CZP)属于NZP族材料。本文用共沉淀法合成了CZP粉体。粉料添加3%的ZnO作为助烧剂在100MPa压力下单面加压成型,坯体在1100℃下无压烧结2h制成CZP陶瓷。讨论了CZP陶瓷的抗弯强度及介电性能(包括介电常数和介质损耗)与工艺参数间的影响关系,并用扫描电镜对陶瓷断面进行观察。实验测得CZP陶瓷的抗弯强度为59.45MPa,介电常数为3.85,属于低介电材料。

CaZr4（PO4）6 （abbreviation CZP） system which belongs to a new large family of materials known as NZP, was synthesized by co-precipitate method. The ceramic of CZP was made by dry pressing at 100MPa pressure and sintering in air at 1100℃ for 2 hours with the addition of 3% ZnO. The bending strength and dielectric properties, including dielectric constant and loss tangent, were investigated. SEM studies are also discussed. The bending strength of the sintered material is only 59.45MPa. In dielectric properties measurement, the dielectric constant of CZP ceramic is 3.85 and belongs to low-dielectric material.