新型金属氧化物半导体场效应晶体管探测器在放疗剂量监控中的应用

A new metallic oxide semiconductor field effect transistor detector for use of in vivo dosimetry

目的探索和评估自行开发研制的新型金属氧化物半导体场效应晶体管(MOSFET)探测器在体实时剂量测量中的应用特性。方法分别使用医科达加速器8、15MV光子线,以及6、8、12、18 MeV电子束刻度MOSFET探测器。根据探测器灵敏度随能量变化情况评估MOSFET探测器能量依赖性。使用8MV光子线在0～50 Gy范围内观察MOSFET探测器读数随累积剂量变化的线性情况,确定MOSFET探测器剂量测量的线性区间。将MOSFET探测器固定在圆柱形PMMA体模中央,顺时针每15°检测探测器信号响应,判断MOSFET探测器方向性。对1例乳腺癌放疗患者应用MOSFET探测器进行了全程剂量监测。在使用NE-2571指形电离室对该患者放疗计划剂量计算进行物理验证后,分别于首次治疗、每周1次治疗及最后1次治疗中应用MOSFET探测器测量患者体表吸收剂量,并将测量结果与该处计划剂量进行比较,确定乳腺癌三维放疗的总体剂量偏差。结果对8、15 MV光子线和6～18MeV电子束测量结果显示,MOSFET探测器灵敏度随能量变化的幅度＜2．5%。这表明MOSFET探测器对中高能射线具有较好的能量响应。在6 V门控电压状态下,MOSFET探测器在0～50 Gy的剂量范围内保持了较好的剂量线性,最大偏差＜3．0%。在每次测量前和测量后分别刻度MOSFET探测器并取其平均值可使其剂量线性误差控制在1%以内。该MOSFET探测器信号响应在270～90°之间呈现出各向同性,读数偏差＜1．5%。但在探测器背面(135～225°之间)的信号响应明显变小,背面与正面的读数偏差最大可达10．0%。应用于患者实时剂量监测的结果显示,实际测量剂量与计划剂量相比平均偏差2．8%,最大偏差＜5．0%,符合AAPM 13号报告对体外放疗剂量总不确定度的质量控制标准。结论该MOSFEYT探测器体积小,操作简单,对中高能辐射具有较好的能量响应和剂量线性,为治疗计划剂量验证和人体吸收剂量测量提供了一种较好的剂量工具。

Objective To investigate the apphcation of a recently developed metallic oxide semiconductor field effect transistor（MOSFET） detector for use in vivo dosimetry. Methods The MOSFET detector was calibrated for X-ray beams of 8 MV and 15 MV, as well as electron beams with energy of 6,8,12 and 18 MeV. The dose linearity of the MOSFET detector was investigated for the doses ranging from 0 up to 50 Gy using 8 MV X-ray beams. Angular effect was evaluated as well in a cylindrical PMMA phantom by changing the beam entrance angle every 15° clockwise. The MOSFET detector was then used for a breast cancer patient in vivo dose measurement, after the treatment plan was verified in a water phantom using a NE-2571 ion chamber, in vivo measurements were performed in the in＇st and last treatment, and once per week during the whole treatment. The measured doses were then compared with planning dose to evaluate the accuracy of each treatment. Results The MOSFET detector represented a good energy response for X-ray beams of 8 MV and 15 MV, and for electron beams with energy of 6 MeV up to 18 MeV. With the 6 V bias, Dose hnearity error of the MOSFET detector was within 3.0% up to approximately 50 Gy, which can be significantly reduced to 1% when the detector was calibrated before and after each measurement. The MOSFET response varied within 1.5% for angles fi＇om 270°to 90°. However, maximum error of 10.0% was recorded comparing MOSFET response between forward and backward direction. In vivo measurement for a breast cancer patient using 3DCRT showed that, the average dose deviation between measurement and calculation was 2.8%, and the maximum error was less then 5.0%. Conclusions The new MOSFET detector, with its advantages of being in size, easy use, good energy response and dose linearity, can be used for in vivo dose measurement.