Al-Mg-Si合金L1_0型GP区的价电子结构分析

Analysis of Electron Structures of GP Zones with Model L1_0 in Al-Mg-Si Alloy

运用固体经验电子理论(EET),对Al-Mg-Si合金L10型GP区的价电子结构进行计算.结果表明,合金基体析出的共格GP区具有比基体更强的共价键络,可提升合金的整体键络强度,并对位错运动造成更大的阻力,从而使得合金得到强化、硬化.

The valence electron structures of the GP zones with model L10 in Al-Mg-Si alloy were calculated according to the empirical electron theory （EET） in solid. The results show that the valence bond-net in GP zones coherence with matrix was much stronger than that in matrix, and enhanced the whole covalence bond strength of alloy, besides blocked the movement of dislocation, therefore alloy was strengthened and hardened.