CIGS电池缓冲层CdS的制备工艺及物理性能

DEPOSITED TECHNOLOGY AND PHOTO-ELECTRIC PROPERTIES OF CdS THIN FILMS

在含有醋酸镉、醋酸氨、硫脲和氨水的水溶液中，化学沉积CdS半导体薄膜，薄膜的厚度与搅拌强度有很大关系，表明薄膜的生长速度是由OH^-和SC（NH2）2的扩散传质为控制步骤。CAS薄膜的电阻率在10^4-- 10^5Ω·Cm之间。CAS薄膜的品格在乙酸胺浓度较小时，为六方晶和立方晶混合结构；乙酸胺浓度较大时，为立方晶结构。利用六方晶与立方晶混合的CAS制备的CIGS太阳电池，光电转换效率最大可达12．1％，3．5×3．6cm^3小面积组件为6．6％。立方相CAS制备的最佳电池效率达到12．17％。两种晶相结构的CAS薄膜对CIGS太阳电池的性能影响没有明显的差别。

CdS thin films were prepared by chemical bath deposition method in aqueous solutions containing cadmium acetate, ammonium acetate, ammonia and thiourea. The CdS film thickness was concerned with stirring solution; the growth rate of CdS thin film is controlled by liquid phase mass transfer of OH^- and SC（NH2）2. The resistivity of the CdS is in the range of from 10^4 to 10^5Ω·cm. The CdS thin film was the mixture of hexagonal and cubic crystal as very small ammonium acetate concentration. When ammonium acetate concentration was very large, the CdS thin film is cubic phase. The highest efficiency of CIGS solar cell and submodule using mixture CdS thin films is 12.10% and 6.60%, respectively. The highest efficiency of CIGS solar cell using cubic CdS thin films is 12.17%. The two kinds of CdS structure did not have an obvious influence on performance of CIGS thin-film solar cells.