热丝化学气相沉积n型nc-Si:H薄膜及nc-Si:H/c-Si异质结太阳电池

STUDY OF n-TYPE nc-Si:H FILMS AND HETEROJUNCTION SOLAR CELLS BY HWCVD

采用热丝化学气相沉积(HWCVD)技术制备n型纳米晶硅(nc-Si∶H)薄膜,系统地研究了沉积参数,特别是掺杂浓度对薄膜微结构、电学性质和缺陷态的影响,获得了器件质量的n型nc-Si∶H薄膜。制备了nc-Si∶H/c-Si HIT(Heterojunction with Intrinsic Thin-layer)结构太阳电池,研究了异质结结构参数对电池性能的影响,初步得到电池性能参数如下:Voc=483mV、Jsc=29.5mA/cm2、FF=70%、η=10.2%。

The n-type hydrogenated nano-crystalline silicon （nc-Si：H） thin films were prepared by hot-wire chemical vapor deposition （HWCVD）.The effect of deposition parameters on the nano-structure, electrical properties and density of states for n-type nc-Si： H films with different dark conductivity and crystalline volume fraction （Xo） were obtained. The effect of the heterojunction structures on the properties of solar cells was investigated. The primary nc-Si ： H/C-Si solar cell with Jsc = 29.5mA·cm^-2, Voc = 483mV, FF = 70% ,and η = 10.2% has been achieved.