新型8～14μm　GaAs／GaAlAs红外探测器数值模拟和分析

The Simulation and Analysis of a New Type of 8-14 μm GaAs/GaAlAs Infrared Photodetectors

简要介绍了红外探测器的历史和现状。在提出的一种新型ＧａＡｓ／ＧａＡｌＡｓ红外探测器的构想及已有工作的基础上，建立了一个物理模型，并进行了模拟计算，着重分析了各个器件参数对器件性能的影响，为今后设计器件打下了理论基础，在此基础上特别指出了该构想的一个新用途：外加偏压调制波长红外探测器。

The history and recent development of infrared detectors (IRD) are discussed; the characteristics and the existed problems of the conventional GaAs/GaAlAs quantum well infrared photodetectors (QWIP) are particularly analysed. According to a new conception of GaAs QWIPs proposed by Shen G D and the achievement gained by Du C X and Deng J, physics model is established,and numerical,simulation is conducted.The effect of the device parameters upon the device characteristics and device design are studied carefully. Moreover, The new type of GaAs/GaAlAs QWIPs with bias-tunedwavelength is presented.