GAT管击穿电压的数值分析

The Numerical Analysis of Breakdown Voltage of GAT

对ＧＡＴ结构晶体管中栅的引入和栅参数改变对击穿电压的影响进行了定量计算，报告了计算的结果，以及对结果的理论分析。计算采用数值分析方法，所用软件为ＰＩＳＣＥＳ．计算结果表明，栅的引入可以显著提高高速功率开关晶体管的击穿电压ＢＶＣＥＯ；栅区浓度越高，栅区结深越深，击穿电压越高；栅间距是提高击穿的关键因素，存在一个最佳值。本计算结果为高频高压功率晶体管的优化设计提供了有力的依据。

The functiong of gates in gate associated transistor (GAT) are discussed and the relation between breakdown voltage and parameters of gate is studied using numerical method. The software used here is PISCES. The following conclusions are reached from calculation The improvement of breakdown voltage is notable because of introducing gate structure into a conventional transistor, The higher impurity concentrations in gate areas, or the deeper depth of gates, the higher breakdown voltage can be achieved, The spacing between gates is a delicate parameter which can be optimized to get a maximum value of BVCEO.