摘要
论述了影响双极晶体管电流增益ｈ_（ＦＥ）低温下降的重掺杂效应，结合具体器件测试并计算出了ｈ_（ＦＥ）的低温下降值，对实测值与计算值的差异进行了分析。最后指出了改进ｈ_ＦＥ温度特性的具体途径。
The effect of heavy doping on common emitter direct-current foreward currentgain(hFE) of bipolar transistor was investigated. hFE under low temperature was measured and calculated. And the difference between the hFE measured and the calculated were analysed. The method to improve hFE temperature dependences is pointed out based on the above work.
出处
《北京工业大学学报》
CAS
CSCD
1996年第4期25-30,共6页
Journal of Beijing University of Technology
关键词
电流增益
低温
失效
可靠性
双极晶体管
curent gain, failure under low temperature, effect of heavy doping
