摘要
介绍了低压压敏陶瓷的导电机理、研究途径,实验并分析了掺入TiO2、籽晶和稳定剂Ta2O5对材料性能的影响及作用原理,做出了适合集成电路用的低压压敏陶瓷材料。
The transmitting electric current mechanism and the development of low voltage varister ceramic were introduced. The experiments and analyzing on the mechanism of doping TiO2 to the material, affecting the material by the crystalline, grain, and a steady Ta2O5 chemical preparation were done. The low voltage varister ceramic material was successfully made for IC manufacturing.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第8期603-606,共4页
Semiconductor Technology
关键词
低压压敏陶瓷
晶粒
晶界
富铋相
low voltage varister ceramic
grain： crystal interlayer
rich Bi layer
