相变存储器器件单元测试系统

Device Unit Test System on Phase Change Memory

通过计算机控制脉冲信号发生器和数字信号源等硬件设备,实现对硫系化合物随机存储器(C-RAM)器件性能的测试。该系统主要有电流与电压关系测试、电压与电流关系测试、电阻与所加的脉冲信号关系的测试和疲劳特性测试等模块组成。通过这些测试从而找出写脉冲信号与擦脉冲信号的高度和宽度的最佳参数、C-RAM器件的阈值电压、循环寿命等重要参数。此系统不仅为研究C-RAM器件的速度、功耗、可靠性等提供了一个途径,又为C-RAM的工艺和结构参数的研究提供了试验平台。

All the characteristics of C-RAM （chalcogenide-random access memory） can be tested through the system that remotes computer controlling the hardware device such as pulse generator and digital source meter etc. It includes several modules of the relationship between current and voltage, voltage and current, resistance and pulse width or height, fatigue characteristics. The optimum parameters of the current height and width as well as the threshold voltage, endurance cycles and so on can be obtained through all the tests. This system provides a method for researching the speed, power consumption, reliability of C-RAM, also provides a platform for studying the C-RAM process and structural parameter.