摘要
利用N+注入蒽降解菌进行诱变选育,在10 keV、8×1015N+/cm2的注入条件下,得到一株高效降解蒽菌株,其降解蒽能力和降解速度比出发菌有明显提高,多次传代实验表明该菌株的遗传稳定性较好。
The mutagenic effects of the anthrancene bacteria by low energy ion implantation have been investigated. Under the implantation conditions of 10 keV,8 × 10^15 N^＋/cm^2 ,a high yield strain has been bred from mutant strains. The degrading anthrancene potency and rate are enhanced comparing with that of the comparison strain. The results show that the mutant strain has high genetic stability.
出处
《河南化工》
CAS
2006年第7期11-13,共3页
Henan Chemical Industry
关键词
离子注入
诱变
蒽
降解菌
ion implantation
mutation
anthrancene
degradation bacteria
