热处理对直流磁控溅射ITO薄膜光电学性质的影响

Influence of Annealing on the Optical and Electrical Properties of ITO Films Prepared by Direct Current Magnetron Sputtering

利用直流磁控溅射在石英衬底上沉积透明导电的掺锡氧化铟(ITO)薄膜,在相同条件下制备了两种不同溅射时间(30、10 m in)的样品,样品在400℃的大气中进行1 h退火处理.利用分光光度计测量薄膜的正入射透射光谱,并拟合透射光谱得到薄膜的折射率、消光系数及厚度;用V an der Pauw方法测量薄膜电学性质,包括载流子浓度、载流子迁移率和电阻率.实验结果显示退火处理对ITO薄膜的光学、电学性质有重要影响,退火样品在可见光区域的透过率明显提高,且光学吸收边向长波方向移动;然而,退火前薄膜的电学性能更好.

Transparent conducting indium tin oxide （ITO） thin films were deposited by direct current magnetron sputtering on quartz substrates, under the identical deposition conditions but with different time （30, 10 min）. The as-deposited films were annealed at 400℃ for 1 h in air. The optical and electrical properties of the films were investigated. The optical constants and thickness were retrieved by all measurement data of the normal incidence transmittance which were measured by spectrophotometer. The carrier concentration, carrier mobility and resistivity of the films were measured by Van der Pauw method. It is found that post-deposition annealing had great influence on the optical and electrical properties of the films. Annealing in air resulted in a shift of the absorption edge to a longer wavelength, and enhanced the optical transmission in the visible region. But the electrical properties of as-deposited films were better than that of annealed samples.