偏振差分反射光谱研究半导体材料的平面内光学各向异性

Study on In-Plane Optical Anisotropy of Semiconductor Materials by Reflectance Difference Spectroscopy

介绍了偏振差分反射光谱的原理,并结合半导体材料平面内光学各向异性的来源,总结了偏振差分反射光谱作为一种重要的表面、界面分析技术在半导体材料研究中的应用,并分析指出其在Si基材料电光改性研究中将会起到重要作用。

In the present review, the measuring principle of reflectance difference spectroscopy （RDS） is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.