摘要
提出了体硅double RESURF器件的表面电场和电势的解析模型.基于分区求解二维Poisson方程,获得double RESURF表面电场的解析表达式.借助此模型,研究了p-top区的结深,掺杂浓度和位置,漂移区的厚度和掺杂浓度,及衬底浓度对表面电场的影响;计算了漂移区长度,掺杂浓度和击穿电压的关系.从理论上揭示了获得最大击穿电压的条件.解析结果、验证结果和数值结果吻合良好.
A new 2D analytical model for the surface electrical field distribution and optimization of bulk-silicon double RESURF devices is presented. Based on the solution to the 2D Poisson＇s equation, the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the doping concentration,the depth and the position of the p-top region, the thickness and the doping concentration of the drift region, and the substrate doping concentration. The dependence of breakdown voltage on the length and doping concentration of the drift region is also calculated. Further more,an effective way to gain the optimum high-voltage is also proposed. All analytical results are verified by simulation results obtained by MEDICI and previous experimental data,showing the validity of the model presented here.
