一个适用于短沟HALO结构MOS器件的直接隧穿栅电流模型

A New Direct Tunneling Gate Current Model for Short Channel MOSFETs with HALO Structure

对沟道长度从10μm到0.13μm,栅氧化层厚度为2.5nm的HALO结构nMOS器件的直接隧穿栅电流进行了研究,得到了一个适用于短沟道HALO结构MOS器件的直接隧穿栅电流模型.随着沟道尺寸的缩短,源/漏扩展区占据沟道的比例越来越大,源漏扩展区的影响不再可以忽略不计.文中考虑了源/漏扩展区对直接隧穿栅电流的影响,给出了适用于不同HALO掺杂剂量的超薄栅（2～4nm）短沟（0.13～0.25μm）nMOS器件的半经验直接隧穿栅电流模拟表达式.

The direct tunneling current of a short channel MOSFET with a HALO structure is investigated, and a new direct tunneling gate current model is obtained. It is found that the extension regions of the gate/source and gate/drain decrease the direct tunneling gate current density because the flat band voltage between the gate/source and gate/drain is higher than that of the substrate. The extension regions reduce direct tunneling current continuously as the channel length decreases. A new direct tunneling gate current model is obtained by comparing the simulation and experimental results. This model is applicable to the devices with an ultra thin gate oxide （2～4nm） ,a short channel （0.13～0.25μm） ,and a HALO structure.