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一种新的GCT门-阴极图形的设计方法 被引量:3

A New Design Method for the Gate-Cathode Layout of GCT
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摘要 在分析门极可关断晶闸管(GTO)和门极换流晶闸管(GCT)门-阴极结构的基础上,依据GCT关断时的换流机理,提出了一种新的GCT门-阴极图形的设计方法.与现有的GCT门-阴极图形相比,用该方法设计的门-阴极图形,在保证开关过程中电流均匀分布的前提下,可增加GCT的有效阴极面积,减小热阻,并提高电流容量. The gate-cathode structures of gate commutated thyristor (GCT) and gate turn-off thyristors are analyzed. Based on the commutation mechanism of a GCT during turn-off,a new design method for the gate-cathode layout of GCT is presented. Compared with the existing method,the new method increases the effective cathode area of GCT, decrease the thermal resistance, and improve the current capability under the precondition of uniform current distribution during turn-off.
作者 王彩琳 高勇
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第7期1300-1304,共5页 半导体学报(英文版)
基金 西安理工大学优秀博士生科研基金资助项目~~
关键词 电力半导体器件 门极换流晶闸管 门极可关断晶闸管 门-阴极结构 power semiconductor devices gate commutated thyristor gate turn-off thyristor gate-cathode structure
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参考文献8

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二级参考文献8

  • 1王彩琳,高勇,张新.非对称型门极换流晶闸管阻断特性的设计与优化[J].西安理工大学学报,2005,21(2):129-133. 被引量:8
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共引文献6

同被引文献28

  • 1何多昌,李军.IGCT器件及其在变流器上的应用[J].机车电传动,2006(5):5-7. 被引量:4
  • 2张明.IGCT器件制造中的阴极梳条成型技术[J].变流技术与电力牵引,2006(6):15-18. 被引量:5
  • 3王成胜,李崇坚,李耀华,绳伟辉,兰志明.7.5MVA大功率三电平IGCT交-直-交变流器[J].电工技术学报,2007,22(8):24-27. 被引量:18
  • 4张明.集成门极换流晶闸管(IGCT)中阴极图形的新排布方法:中国,200610032312.6[P].2006.
  • 5袁立强,赵争鸣,宋高升,等.电力半导体器件原理与应用[M].北京:机械工业出版社,2011.
  • 6徐德鸿.现代电力电子器件原理与应用技术[M].北京:机械工业出版社,2011:5-10.
  • 7童亦斌,张婵.反并联二极管对IGCT关断过程的影响[J].电工技术学报,2007,22(11):125-129. 被引量:10
  • 8张明,赵燕峰,陈彦.IGCT器件的研究与发展[C]//第四届电能质量国际研讨会论文集,2011:25-34.
  • 9Thomas Stiasny, Peter Streit. A New Combined Local and Lateral Design Technique for Increased SOA of Large Area IGCTs [J]. IEEE Reprinted From the International Symposium on Power Semiconductor Devices and Ics, 2005 (5) : 756-760.
  • 10Klaka S, Linder S, Frecker M ,et al. A Family of Reverse Conduct- ing Gate Commutated Thyristors for Medium Voltage Drive Appli- cations [ J ]. PCIM' 97 Hong Kong, 1997 (2) : 45-50.

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