高d_（33）·g_（33）值PZT压电陶瓷材料中Sb_2O_3掺杂的作用

THE EFFECT OF DOPING Sb 2O 3 IN HIGH d 33 ·g 33 PZT PIEZOELECTRIC CERAMICS

Ｓｂ２Ｏ３对Ｐｂ（Ｚｒ０．５４Ｔｉ０．４６）Ｏ３的掺杂改性具有调整材料四方度（ｃ／ａ）的作用．实验表明，Ｓｂ２Ｏ３的适量添加可使材料四方度的调整达到一个较佳值，从而得到ｄ３３＝５７０×１０－１２Ｃ／Ｎ、ｇ３３＝３２×１０－３Ｖｍ／Ｎ的高压电活性的材料组成．

The effect of doping Sb 2O 3 in Pb(Zr 0.54 Ti 0.46 )O 3 is that the tetragonal degreee (c/a) of PZT materials can be adjusted. The experiments indicate that the tetragonal degree (c/a) existes an optimum value after doping Sb 2O 3 in PZT, at this point, high piezoelectric activity material with d 33 =570×10 -12 C/N, g 33 =32×10 -3 Vm/N can be obtained.