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铝诱导非晶硅薄膜快速低温晶化研究 被引量：5

Study on aluminum-induced crystallization of a-Si thin films
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摘要 采用金属铝诱导晶化非晶硅薄膜的方法制备多晶硅薄膜。研究了不同的退火温度对a-S i薄膜晶化的影响,采用XRD,R am an,SEM等测试手段分析了实验结果。实验结果发现非晶硅薄膜在400℃下退火20 m in薄膜仍为非晶结构(a-S i),在450℃下退火20 m in后非晶硅开始晶化且随着温度的升高,且晶化程度加强。 Amorphous silicon （a-Si） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （poly-Si） thin films were prepared by aluminum-induced crystallization （AIC）. The effect of annealing temperature on the crystallization of a-Si films was investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM, It was found that the a-Si film remains amorphous after annealing at 400℃ for 20min, but it begins to crystallize after annealing at 450℃ for 20min with its crystallinity improved obviously with increasing annealing temperature.
作者 徐慢 夏冬林 杨晟 赵修建
机构地区 硅酸盐材料工程教育部重点实验室(武汉理工大学)
出处 《真空》 CAS 北大核心 2006年第4期16-18,共3页 Vacuum
基金 硅酸盐材料工程教育部重点实验室(武汉理工大学)开放课题基金资助项目(SYSJJ2005-12) 武汉理工大学校基金(2005XJJ054)
关键词 铝诱导晶化法(AlC) 非晶硅薄膜 多晶硅薄膜 aluminum-induced crystallization （AIC） polycrystalline silicon thin film amorphous silicon thin film
分类号 O484 [理学—固体物理] TN304 [电子电信—物理电子学]
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参考文献10

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  • 9林揆训,林璇英,梁厚蕴,池凌飞,余楚迎,黄创君.非晶硅薄膜的低温快速晶化及其结构分析[J].物理学报,2002,51(4):863-866. 被引量：21
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真空
2006年 第4期

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