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EACVD金刚石膜热丝温度的单片机测控

Hot-filament temperature monitored by chip microprocessor during diamond thick film growth by EACVD
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摘要 在EACVD金刚石膜生长过程中,衬底温度、热丝温度、热丝电流和气源流量等是其重要的工艺参数。鉴于手动控制的不精确,采用了单片机M SP 430控制热丝温度,对其他工艺参数进行了监测。介绍了计算机测控系统硬件组成和软件实现。采用模糊P ID控制后,热丝温度控制精度为2℃,生长速率达到10μm/h以上。实验结果表明,所研制的测控系统运行可靠,使用方便,初步实现了金刚石厚膜稳定优质生长。 During the growth of diamond thick film in EACVD process, the substrate temperature, hot-filament temperatare/current and gas supply flowrate are all the important parameters. In view of the imprecise manual control, a chip microprocessor MSP 430 was introduced in EACVD to implement the real-time control of hot-filament temperature with the rest monitored. Describes the hardware configuration and software implementation of the computerized monitoring system. With the fuzzy PID cntrol applied to the system, the controlling precision of hot-filament temperatur is±2℃ with growth rate up to over 10μm/hr. Experimental results show that the monitoring system we developed runs reliably and is operated easily. So, on the whole, the stable growth of quality diamond thick films are available in this way.
出处 《真空》 CAS 北大核心 2006年第4期29-31,共3页 Vacuum
关键词 EACVD 热丝温度 单片机MSP430 测控 EACVD (electron-aided chemical vapor deposition) hot filament temperature, chip microprocessor MSP430 monitoring
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参考文献4

  • 1Zuo D W,Song S L,Xiang B K,et al.Some key points for EACVD thick diamond film preparation[J].Key Engineering Materials.2004,258-259:517-521.
  • 2Celii F G,Pehrsson P E,Wang H T.and Butler J E.Infrared detection of gaseous species during the filament-assisted growth of diamond[J].Appl.Phys.Lett.,1988,52(11):2043-2045.
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  • 4卢文壮.基于过渡层在硬质合金上沉积CVD金刚石薄膜的研究[D].南京航空航天大学:图书馆,2002.

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