“包络法”在Ba(ZrTi)O_3铁电薄膜中的应用

"Envelop method" Applied on Ba(ZrTi)O_3 Thin Films

采用溶胶-凝胶法在石英衬底上制备B a(Z rT i)O3铁电薄膜,U-3010紫外光谱仪测量BZT薄膜的透射光谱,光谱表明制备的BZT薄膜样品厚度均匀,利用“包络法”计算出薄膜的厚度约为301.3nm并得到薄膜的复折射率随入射光频率的变化曲线,进一步拟和出BZT薄膜的透射谱.研究表明在紫外光区到近红外光区“包络法”计算精度高.

Ba（ZrTi）O3（BZT） ferroelectric thin films have been put on quartz substrates by a Sol-Gel process. The transmittance of the prepared BZT thin films were investigated by using U-3010 ultraviolet ray survey. Using ＂envelop method＂, we obtained the thick of BZT thin films about 301.3 nm and change of refractivity with the frequency of incident ray. Accordingly, this work indicates that ＂envelop method＂ has high accuracy in ultraviolet ray to near infrared.