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矩形平面磁控溅射装置若干参数的探讨 被引量:3

A DISCUSSION ON PARAMETERS OF RECTANGULAR PLANE MAGNETRON SPUTTERING APPARATUS
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摘要 矩形平面磁控溅射装置中存在着诸如磁场、电场、气压、靶材、基片温度及速度、几何结构等参数间的相互影响,并且最终决定了沉积薄膜的性能。为了方便矩形平面磁控溅射装置的设计,就如下参数进行探讨:磁感应强度的设计与计算;电压、电流和气压的关系;基片温度及速度;膜厚均匀度。 The parameters of the rectangular plane magnetron sputtering apparatuses, such asstrength of magnetic field and electric field, gas pressure, target materials, temperature and movingspeed of substrates, geometry construction and so on, are affected each other and affect at last the design of the rectangular plane magnetron sputtering apparatus' The following subjects are discussed inthis paper: disign and culculation of magnetic induction; relationship between electric voltage, electriccurrent and gas pressure, temperature and moving speed of substrates, uniformity of film thickness.
出处 《真空与低温》 1996年第2期63-67,共5页 Vacuum and Cryogenics
关键词 矩形平面 磁控溅射 磁控靶 薄膜 沉积 Rectangular plane Magnetron sputtering.
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